SPP02N60C3 Description
·Ultra low gate charge ·Ultra low effective capacitance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 25 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.08mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP02N60C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -Ultra low effective capacitance