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SPP02N60S5 - Power Transistor

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.8 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP02N60S5 Package PG-TO220 Ordering Code Q67040-S4181 Marking 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.