SPP03N60C3 Description
·Ultra low gate charge ·Ultra low current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 9.6 PD Total Dissipation @TC=25℃ 38 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.135mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP03N60C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -Ultra low current capability -Improved transconductance