SPP03N60C3 Datasheet and Specifications PDF

·Ultra low gate charge ·Ultra low current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage .

*Static drain-source on-resistance: RDS(on) ≤1.4Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*Ultra low current capability
*Improved transconductance
*ABSOLUT.

6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDUKLJKYROWDJHWHFKQRORJ •8OWUDORZJDWHFKDUJH VDS#Tjmax 5'6RQ ,' • 3HULRGLFDYDODQFKHUDWHG 3G72FP •([WUHPHG.

8QLW 633 63$   $       $   P-     “ “ ± ±    15 $ 9 :
*& V/ns Rev. 3.1 PDJH 2009-11-26 6331& 63$1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj 
*& 7KHUP.