Datasheet4U Logo Datasheet4U.com

SPP04N80C3 - N-Channel MOSFET

General Description

High peak current capability Ultra low gate charge Ultra low effective capacitances ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤1.3Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP04N80C3 Cool MOS Power Transistor Infineon Technologies
SPP04N50C3 Cool MOS Power Transistor Infineon Technologies
SPP04N60C2 Cool MOS Power Transistor Infineon
SPP04N60C3 Power Transistor Infineon
SPP04N60S5 Power Transistor Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
SPP04N50C3 N-Channel MOSFET
SPP04N60C3 TO-251 N-Channel MOSFET
SPP04N60C3 TO-220C N-Channel MOSFET
SPP04N60S5 N-Channel MOSFET
SPP02N60C3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor SPP04N80C3，ISPP04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 63 Tj Max.