SPP04N80C3 Description
·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 63 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.24mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP04N80C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION -High peak current capability -Ultra low gate charge -Ultra low effective capacitances