SPP04N80C3 Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
High peak current capability - Ultra low gate charge - Ultra low effective capacitances - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 2 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP04N80C3，ISPP04N80C3 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.24mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.5A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=800V; VGS= 0V VSD Diode forward voltage IF=Is=4A; VGS = 0V MIN TYP MAX UNIT 800 V 2.1 3.9 V 1.3 Ω 0.1 μA 10 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤1.3Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
