SPP04N80C3 Datasheet and Specifications PDF

·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source V.

*Static drain-source on-resistance: RDS(on) ≤1.3Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*High peak current capability
*Ultra low gate charge
*Ultra low effective capacitances
*.

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free .

* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant
* Ultra low gate charge
* Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q .