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SPP06N60C3

Manufacturer: Inchange Semiconductor

SPP06N60C3 datasheet by Inchange Semiconductor.

SPP06N60C3 datasheet preview

SPP06N60C3 Datasheet Details

Part number SPP06N60C3
Datasheet SPP06N60C3-INCHANGE.pdf
File Size 243.49 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
SPP06N60C3 page 2

SPP06N60C3 Overview

·Ultra low gate charge ·High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.2 IDM Drain Current-Single Pulsed 18.6 PD Total Dissipation @TC=25℃ 74 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.26mA RDS(on) Drain-Source On-Resistance VGS=10V;.

SPP06N60C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -Ultra low gate charge -High peak current capability

SPP06N60C3 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo SPP06N60C3 Cool MOS Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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