SPP06N60C3 Datasheet and Specifications PDF

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TM Power Transistor Product Summary V DS @ T j,max R DS(on),max ID 650 0.75 6.2 V Ω A
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* High peak current capability
* Ultra low effective capacitances
* Extreme dv /dt rated
* Improved transconductanc.

·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con.

*Static drain-source on-resistance: RDS(on) ≤0.75Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .