SPP11N60CFD Overview
·Ultra low gate charge ·High peak current capability · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.5mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPP11N60CFD Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -High peak current capability
