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SPP11N60CFD - Power Transistor

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge SPP11N60CFD VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A PG-TO220 Type Package SPP11N60CFD PG-TO220 Ordering Code Q67040-S4618 Marking 11N60CFD Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C T C = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID = 5.