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SPP11N80C3 - N-Channel MOSFET

Key Features

  • Ultra low effective capacitances.
  • Low gate charge.
  • Improved transconductance.
  • Low gate drive power loss.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 11 7.