SPP11N80C3 Datasheet and Specifications PDF

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche t.

*Ultra low effective capacitances
*Low gate charge
*Improved transconductance
*Low gate drive power loss
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare.

* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
* P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 0.45 11 V Ω A P-TO220-3-1 1 2 3 Typ.