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SPP17N80C3 Datasheet

Manufacturer: Inchange Semiconductor
SPP17N80C3 datasheet preview

Datasheet Details

Part number SPP17N80C3
Datasheet SPP17N80C3-INCHANGE.pdf
File Size 243.61 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
SPP17N80C3 page 2

SPP17N80C3 Overview

·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 227 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V;.

SPP17N80C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -High peak current capability -Ultra low gate charge -Ultra low effective capacitances

SPP17N80C3 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo SPP17N80C3 Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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