Datasheet Details
| Part number | SPP17N80C3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.61 KB |
| Description | N-Channel MOSFET |
| Download | SPP17N80C3 Download (PDF) |
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| Part number | SPP17N80C3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 243.61 KB |
| Description | N-Channel MOSFET |
| Download | SPP17N80C3 Download (PDF) |
|
|
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·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 227 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.55 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP17N80C3，ISPP17N80C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor SPP17N80C3，ISPP17N80C3 ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SPP17N80C3 | Power Transistor | Infineon Technologies |
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