SPP17N80C2
SPP17N80C2 is Power Transistor manufactured by Infineon.
Feature
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- C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
P-TO263-3-2
Product Summary
VDS R DS(on) ID
800 290 17
V m W A
Type SPP17N80C2 SPB17N80C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4353 Q67040-S4354
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse
ID=4A, V DD=50V
Avalanche energy, repetitive t AR limited by Tjmax1)
ID=17A, VDD=50V w w w t a .D
S a e h
U 4 t e
Marking
Symbol
.c m o
P-TO220-3-1
SPP17N80C2 SPB17N80C2
Value 17 11 51 670 0.5 17 6 ±20 208 -55... +150
Unit A
ID puls EAS EAR IAR dv/dt m J
Avalanche current, repetitive t AR limited by Tjmax Reverse diode dv/dt
IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C
A V/ns V W °C
Gate source voltage Power dissipation
TC = 25 °C
VGS Ptot Tj , Tstg
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Operating and storage temperature w w w ta a D .2000-05-29 e h...
