SPP20N60C3 Overview
Key Specifications
Package: TO-220-3
Pins: 3
Height: 9.25 mm
Length: 10 mm
Description
Ultra low gate charge - High peak current capability - Improved transconductance - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.7 IDM Drain Current-Single Pulsed 62.1 PD Total Dissipation @TC=25℃ 208 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 0.6 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP20N60C3，ISPP20N60C3 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=13.1A IGSS Gate-Source Leakage Current VGS=30V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=IS; VGS = 0V MIN TYP MAX UNIT 600 V 2.1 3.9 V 0.19 Ω 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.19Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
