SPP20N60C3 Datasheet and Specifications PDF

·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage .

*Static drain-source on-resistance: RDS(on) ≤0.19Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLU.

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