Full PDF Text Transcription for SPW12N50C3 (Reference)
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SPW12N50C3. For precise diagrams, and layout, please refer to the original PDF.
ment mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11.6 IDM Drain Current-Single Pulsed 34.8 PD Total Dissipation @TC=25℃ 125 Tj Max.
SPW12N50C3 Datasheet
