SPW12N50C3
SPW12N50C3 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
V Ω A
Type SPW12N50C3
Package P-TO247
Ordering Code Q67040-S4580
Marking 12N50C3
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11.6 7
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
34.8 340 0.6 11.6 6 ±20
±30 m J
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
I D = 11.6 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax I AR Reverse diode dv/dt dv/dt
IS=11.6A, VDS=480V, T j=125°C
A V/ns V W °C
2003-06-30
Gate source voltage
VGS VGS Ptot T j , T stg
Page 1
Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
125 -55... +150
Final data
Maximum Ratings Parameter Drain Source voltage slope
V DS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction
- case Thermal resistance,...
