Datasheet Details
| Part number | ST901T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.58 KB |
| Description | NPN Transistor |
| Datasheet | ST901T-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor ST901T.
| Part number | ST901T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.58 KB |
| Description | NPN Transistor |
| Datasheet | ST901T-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitino for small engines ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A ICM Collector Current-peak 8 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ST901T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 350 V VCE(sat) Collector-Emitter Saturation Voltage IC=2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ST901T | High voltage NPN transistor | ST Microelectronics |
 |
ST9011 | NPN Silicon Epitaxial Planar Transistor | SEMTECH |
|
ST9012 | PNP Silicon Epitaxial Planar Transistor | SEMTECH |
|
ST9013 | NPN Transistor | SEMTECH |
|
ST90135 | Microcontroller | ST Microelectronics |
| Part Number | Description |
|---|