Semtech Corporation ST9015
PNP Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 45 5 100 450 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA Current Gain Group Symbol A B C D hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT COB Min. 60 100 200 400 50 45 5 100 - Max. 150 300 600 800 50 50 0.65 1 7 Unit - Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA Output...