Semtech Corporation ST9012
PNP Silicon Epitaxial Planar Transistor
| Part No. | ST9012 |
|---|---|
| Datasheet | ST9012 Download |
| Manufacturer |  Semtech Corporation |
| Description | PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 40 30 5 500 625 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 50 mA Current Gain Group G H I at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 μA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 μA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE fT Min. 110 177 250 40 40 30 5 100 Max.