STB12NM50-2 Datasheet (Inchange Semiconductor)

Part STB12NM50-2
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 264.78 KB
Inchange Semiconductor

STB12NM50-2 Overview

Description

Low Drain-Source On-Resistance.

Key Features

  • Drain Current –ID= 12A@ TC=25℃
  • Drain Source Voltage- : VDSS= 500V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation