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STB12NM50 - N-CHANNEL MOSFET

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • Type VDSS (@Tjmax) STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP 550V 550V 550V 550V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP 550V 550V 550V 550V RDS(on) <0.35Ω <0.35Ω <0.35Ω <0.35Ω ID 12A 12A 12A 12A ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ 100% avalanche tested ■ Low gate input resistance ■ Tight process control and high manufacturing yields Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.