STB12NM50 Datasheet | STMicroelectronics

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General Features Type VDSS (@Tjmax) STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP 550V 550V 550V 550V RDS(on) <0.35Ω <0.35Ω <0.35Ω <0.35Ω 12A 12A 12A 12A - High dv/dt and avalanche capabilities - Low input capacitance and gate charge - 100% avalanche tested - Low gate input resistance - Tight process control and high manufacturing yields Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. Applications - Switching application 3 2 1 TO-220 3 2 1 TO-220FP 3...