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STB12NM50ND - N-channel Power MOSFET

General Description

FDmesh™ technology combines the MDmesh™

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. 3 1 D2PAK 3 1 DPAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' Table 1.