STB12NM50ND Datasheet and Specifications PDF

FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suita.

Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Application
* Switching applications Description FDmesh™ technology c.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Min.

*Drain Current
*ID= 11A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS.