STB12NM50T4 Datasheet | STMicroelectronics

STB12NM50T4, STP12NM50, STP12NM50FP N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages 3 1 D2 PAK 3 2 1 TO-220FP TO-220 1 23 D(2, TAB) Features Order codes STP12NM50 500 V STP12NM50FP - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance RDS(on) max. 350 mΩ Applications - Switching applications ID 12 A G(1) S(3) NG1D2TS3 Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's Power MESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 For further information contact your local STMicroelectronics sales...