STB12NM50T4 Overview
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the pany's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to...
STB12NM50T4 Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance