STMicroelectronics STB12NM50T4
N-CHANNEL MOSFET
| Part No. | STB12NM50T4 |
|---|---|
| Datasheet | STB12NM50T4 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS STB12NM50T4 STP12NM50 500 V STP12NM50FP● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance RDS(on) max. 350 mΩ
APPLICATIONS
● Switching applications ID 12 A G(1) S(3) NG1D2TS3DESCRIPTION
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 For further information contact your local STMicroelectronics sales office. STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-...
