Datasheet4U Logo Datasheet4U.com

STB15N65M5-2 - N-Channel MOSFET

General Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Key Features

  • Drain Current.
  • ID= 11A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 340mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB15N65M5 N-channel Power MOSFET STMicroelectronics
STB15N25 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics
STB15N80K5 N-channel Power MOSFET STMicroelectronics
STB15NK50Z N-CHANNEL Power MOSFET STMicroelectronics
STB15NK50Z-1 N-CHANNEL Power MOSFET STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STB15N80K5 N-Channel MOSFET
STB15NM60ND N-Channel MOSFET
STB100N10F7 N-Channel MOSFET
STB100N6F7-2 N-Channel MOSFET
STB11N65M5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor STB15N65M5-2 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 340mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.