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STB15NM60ND - N-Channel MOSFET

General Description

Drain Current: ID=14A@ TC=25℃ Drain Source Voltage: : VDSS= 600V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE U

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isc N-Channel MOSFET Transistor STB15NM60ND DESCRIPTION ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 14 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W isc website：www.iscsemi.