STB15NM60ND datasheet by Inchange Semiconductor.
| Part number | STB15NM60ND |
|---|---|
| Datasheet | STB15NM60ND-INCHANGE.pdf |
| File Size | 211.93 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET |
|
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ID=14A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 14 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction...
View STB15NM60ND datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
STB15NM60ND | N-channel Power MOSFET | STMicroelectronics |
|
STB15NM60N | N-channel Power MOSFET | STMicroelectronics |
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