Datasheet Details
| Part number | STB15NM60ND |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | STB15NM60ND-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor STB15NM60ND.
| Part number | STB15NM60ND |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.93 KB |
| Description | N-Channel MOSFET |
| Datasheet | STB15NM60ND-INCHANGE.pdf |
|
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·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 14 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB15NM60ND ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STB15NM60ND | N-channel Power MOSFET | STMicroelectronics |
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STB15NM60N | N-channel Power MOSFET | STMicroelectronics |
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