| Part Number | STB15NM60ND |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power . tage VDS= VGS; ID=0.25mA 3 5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A 0.299 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VDS=600V; VGS= 0;TC= 125℃ 1 µA 100 VSD Forward On-Voltage IS= 14A; VGS=0 . |
STB15NM60ND Datasheet
The STB15NM60ND is a N-Channel MOSFET.
| Part Number | STB15NM60ND |
|---|---|
| Description | N-channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advan.
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Type
VDSS (@Tjmax) RDS(on) max
ID 14 A 14 A 14 A(1) 14 A 14 A
3 1
3 12
STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND
650 V
0.299 Ω
D2PAK
2 1 3
I²PAK
TO-247
3 1 2
1 2 3
1. Limited only by maximum temperature allowed * * * * * The worldwide best RDS(on)* ar. |