Datasheet4U Logo Datasheet4U.com

STB32NM50N - N-Channel MOSFET

General Description

Drain Current: ID= 22A@ TC=25℃ Drain Source Voltage : VDSS= 500V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

.

Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER V

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB32NM50N N-channel MOSFET STMicroelectronics
STB32N65M5 N-channel MOSFET STMicroelectronics
STB300NH02L N-CHANNEL Power MOSFET ST Microelectronics
STB30120C SCHOTTKY RECTIFIER SMC Diode
STB30150C SCHOTTKY RECTIFIER SMC Diode

Other Datasheets by Inchange Semiconductor

Part Number Description
STB32N65M5 N-Channel MOSFET
STB30N65M5 N-Channel MOSFET
STB31N65M5 N-Channel MOSFET
STB34N65M5 N-Channel MOSFET
STB34NM60N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB32NM50N ·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.66 ℃/W isc website：www.iscsemi.