STMicroelectronics STB32NM50N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STB32NM50N |
|---|---|
| Datasheet | STB32NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N●
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● VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 3 1 2 2 1 3 TO-247
APPLICATIONS
● Switching applications Figure 1. Internal schematic diagramDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $ OR 4!" ' 3 !- V Table 1. Device summary Marking Package D2PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N 32NM50N August 2012 This is information on a product in full production. Doc ID 023436 Rev 1 1/21 21 Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
