Datasheet Details
| Part number | STB32NM50N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 608.89 KB |
| Description | N-channel MOSFET |
| Datasheet |
 STB32NM50N Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N.
- VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 3 1 2 2 1 3 TO-247.