Datasheet4U Logo Datasheet4U.com

STF11NM50N - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID= 8.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF11NM50N N-channel Power MOSFET STMicroelectronics
STF11NM60N N-channel MOSFET ST Microelectronics
STF11NM60ND N-Channel Power MOSFET STMicroelectronics
STF11NM65N N-channel MOSFET STMicroelectronics
STF11NM80 N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STF11NM60N N-Channel MOSFET
STF11NM60ND N-Channel MOSFET
STF11N65M5 N-Channel MOSFET
STF110N10F7 N-Channel MOSFET
STF100N10F7 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor STF11NM50N FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pluse 34 A PD Total Dissipation @TC=25℃ 25 W TJ Max.