STF11NM50N Datasheet | STMicroelectronics

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω , 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes STD11NM50N STF11NM50N STP11NM50N - - - VDSS @TJmax RDS(on) max < 0.47 Ω 550 V 8.5 A DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is...