Datasheet4U Logo Datasheet4U.com

STF140N8F7 - N-Channel MOSFET

General Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Key Features

  • Drain Current.
  • ID= 64A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 80V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.3mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF140N8F7 N-CHANNEL POWER MOSFET STMicroelectronics
STF140N10F4 Power MOSFET STMicroelectronics
STF140N6F7 N-CHANNEL POWER MOSFET STMicroelectronics
STF14N80K5 N-channel Power MOSFET STMicroelectronics
STF14NM50N Power MOSFETs ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STF140N6F7 N-Channel MOSFET
STF14NM50N N-Channel MOSFET
STF100N10F7 N-Channel MOSFET
STF100N6F7 N-Channel MOSFET
STF10NM60ND N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.