Datasheet4U Logo Datasheet4U.com

STF140N8F7 - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STF140N8F7 VDS 80 V RDS(on) max. 4.3 mΩ ID 64 A PTOT 35 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF140N8F7 N-Channel MOSFET INCHANGE
STF140N6F7 N-Channel MOSFET INCHANGE
STF14NM50N Power MOSFETs ST Microelectronics
STF14NM50N N-Channel MOSFET INCHANGE
STF100N10F7 N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STF140N10F4 Power MOSFET
STF140N6F7 N-CHANNEL POWER MOSFET
STF14N80K5 N-channel Power MOSFET
STF14NM65N N-channel Power MOSFET
STF100N10F7 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF140N8F7 N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features Order code STF140N8F7 VDS 80 V RDS(on) max. 4.3 mΩ ID 64 A PTOT 35 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.