Datasheet Details
| Part number | STF26NM60N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 261.96 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 STF26NM60N Datasheet
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General Description
Low Drain-Source On-Resistance
APPLICATIONS
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Pluse
80
A
Key Features
- Drain Current.
- ID=20A@ TC=25℃.
- Drain Source Voltage- : VDSS= 600V(Min).
- Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max).
- 100% avalanche tested.
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
