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STF26NM60ND - N-Channel MOSFET

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.

Features

  • Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities ' 7$% .

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STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Features Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities ' 7$% Applications • Switching applications *  6  !-V Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.
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