Datasheet Details
| Part number | STF26NM60ND |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.27 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 STF26NM60ND Datasheet
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General Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.
Key Features
- Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche capabilities ' 7$% .
