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isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
22
A
ID(puls)
Pulse Drain Current
88
A
Ptot
Total Dissipation@TC=25℃
35
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.6
℃/W
STF32NM50N
isc website：www.iscsemi.
STF32NM50N Datasheet
