STF32NM50N Datasheet and Specifications PDF

The STF32NM50N is a N-Channel MOSFET.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Pins3
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberSTF32NM50N Datasheet
ManufacturerInchange Semiconductor
Overview ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch. mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=11A 0.13 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA VDS= 500V; VGS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0;TC=125℃ 1 µA 100 VSD D.
Part NumberSTF32NM50N Datasheet
DescriptionN-channel MOSFET
ManufacturerSTMicroelectronics
Overview These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to . TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N
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* VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 3 1 2 2 1 3 TO-247 Applicat.

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