STP100N8F6
Overview
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | STP100N8F6 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 200.94 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| STP100N8F6 | STMicroelectronics | N-channel Power MOSFET |