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STP100N8F6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP100N8F6 N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 DocID026838 Rev 3 This is information on a product in full production. 1/15 www.st.