STP18NM60ND Description
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STP18NM60ND TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
STP18NM60ND Key Features
- Drain Current -ID= 13A@ TC=25℃ -Drain Source Voltage