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STP18NM60ND - N-Channel MOSFET

General Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃

Key Features

  • Drain Current.
  • ID= 13A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature 600 V ±25 V 13 A 52 A 130 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.