| Part Number | STP18NM60ND Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolution.
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
ID
<0.29 Ω 13 A
* The worldwide best RDS(on)* area amongst the fast recovery diode devices * 100% avalanche tested * Low input capacitance and gate charge * Low gate input resistance * Extremely high dv/. |
STP18NM60ND Datasheet and Specifications PDF
The STP18NM60ND is a N-channel Power MOSFET.
| Part Number | STP18NM60ND Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID IDM PD TJ Tstg
Drain-Source Voltage Gate-Source Volt.
*Drain Current *ID= 13A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Sw. |