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STP21N65M5 - N-Channel MOSFET

General Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Key Features

  • Drain Current.
  • ID= 17A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 179mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for STP21N65M5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP21N65M5. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 179mΩ(Max...

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SS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 179mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

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Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo STP21N65M5 N-CHANNEL MOSFET STMicroelectronics

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