STMicroelectronics STP21N65M5
The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.| Part No. | STP21N65M5 |
|---|---|
| Datasheet | STP21N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 17A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP TAB 1 23 I 2PAK 1 23 TO-220 D(2, TAB) Order code STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 VDS 650 V● Higher VDSS rating
● Higher dv/dt capability
● Excellent switching performance
● Extremely low RDS(on)
● 100% avalanche tested RDS(on) max. 179 mΩ ID 17 A
APPLICATIONS
G(1)● Switching applications S(3)
DESCRIPTION
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. Product status links STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 DS6116 - Rev 5 - August 2025 For further information, contact your local STMicroelectronics sales office. STB21N65M5, STF21N65M5, STI21N65M5, STP21N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT T...
