Full PDF Text Transcription for STP9NM40N (Reference)
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STP9NM40N. For precise diagrams, and layout, please refer to the original PDF.
oltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22.4 A PD Total Dissipation @TC=25℃ 60 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.08 ℃/W isc website：www.
STP9NM40N Datasheet
