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STP9NM40N - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription for STP9NM40N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP9NM40N. For precise diagrams, and layout, please refer to the original PDF.

STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes STD9NM40N ST...

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packages Datasheet — production data Features Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 3 1 DPAK TAB 3 2 1 T

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