Datasheet4U Logo Datasheet4U.com

STP9NM40N - N-channel Power MOSFET

Datasheet Summary

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

Datasheet preview – STP9NM40N

Datasheet Details

Part number STP9NM40N
Manufacturer STMicroelectronics
File Size 579.90 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP9NM40N Datasheet
Additional preview pages of the STP9NM40N datasheet.

📁 Similar Datasheet

  • STP9NM40N - N-Channel MOSFET (INCHANGE)
  • STP9NM60N - N-Channel MOSFET (INCHANGE)
  • STP9NB50 - PowerMesh MOSFET (ST Microelectronics)
  • STP9NB50FP - PowerMesh MOSFET (ST Microelectronics)
  • STP9NB60 - PowerMesh MOSFET (ST Microelectronics)
  • STP9NC60 - N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET (ST Microelectronics)
  • STP9NC60FP - N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET (ST Microelectronics)
  • STP9NC65 - N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMeshII MOSFET (ST Microelectronics)
  • STP9NC65FP - N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMeshII MOSFET (ST Microelectronics)
  • STP9NK50Z - N-CHANNEL Power MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 3 1 DPAK TAB 3 2 1 TO-220 Figure 1.
Published: |