Inchange Semiconductor STU13NM60N
N-Channel MOSFET
| Part No. | STU13NM60N |
|---|---|
| Datasheet | STU13NM60N Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 11A@ TC=25℃●Drain Source Voltage- : VDSS= 600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max)
●100% avalanche tested
●Low input capacitance and gate charge
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGSS Drain-Source Voltage Gate-Source Voltage 600 V ±25 V ID Drain Current-Continuous@TC=25℃ 11 A IDM Drain Current-Single Pulsed PD Total Dissipation 44 A 25 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.39 UNIT ℃/W STU13NM60N isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor STU13NM60N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1m...