STMicroelectronics STU13NM60N
N-CHANNEL Power MOSFET
| Part No. | STU13NM60N |
|---|---|
| Datasheet | STU13NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance ID 11 A D(2, TAB)
APPLICATIONS
● Switching applications G(1) S(3) NG1D2TS3DESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 - October 2020 For further information contact your local STMicroelectronics sales office. STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source volta...
