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STW20NM50FD - N-Channel MOSFET

Key Features

  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Tight process control and high manufacturing yields.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW20NM50FD ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Tight process control and high manufacturing yields ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20 14 80 PD Total Dissipation 214 Tj Max.